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STK12C68-5 (SMD5962-94599)
Document Number: 001-51026 Rev. **
Page 9 of 18
AC Switching Characteristics
SRAM Read Cycle
Parameter
Description
35 ns
55 ns
Unit
Min
Max
Min
Max
Cypress
Parameter
Alt
tACE
tELQV
Chip Enable Access Time
35
55
ns
tRC
[7]
tAVAV, tELEH
Read Cycle Time
35
55
ns
tAA
[8]
tAVQV
Address Access Time
35
55
ns
tDOE
tGLQV
Output Enable to Data Valid
15
35
ns
tOHA
[8]
tAXQX
Output Hold After Address Change
5
5
ns
tLZCE
[9]
tELQX
Chip Enable to Output Active
5
5
ns
tHZCE
[9]
tEHQZ
Chip Disable to Output Inactive
10
12
ns
tLZOE
[9]
tGLQX
Output Enable to Output Active
0
0
ns
tHZOE
[9]
tGHQZ
Output Disable to Output Inactive
10
12
ns
tPU
[6]
tELICCH
Chip Enable to Power Active
0
0
ns
tPD
[6]
tEHICCL
Chip Disable to Power Standby
35
55
ns
Switching Waveforms
Figure 8. SRAM Read Cycle 1: Address Controlled [7, 8]
Figure 9. SRAM Read Cycle 2: CE and OE Controlled [7]
Notes
7. WE and HSB must be High during SRAM Read cycles.
8. Device is continuously selected with CE and OE both Low.
9. Measured ±200 mV from steady state output voltage.
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