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TPS1101YPW 数据表(PDF) 7 Page - Texas Instruments |
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TPS1101YPW 数据表(HTML) 7 Page - Texas Instruments |
7 / 10 page TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS Figure 7 1.2 0.9 0.8 0.6 1.3 1.4 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE (NORMALIZED) vs JUNCTION TEMPERATURE 1.5 1.1 1 0.7 – 50 0 50 100 150 TJ – Junction Temperature – °C VGS = – 10 V ID = – 1A Figure 8 – 0.1 – 0.1 SOURCE-TO-DRAIN DIODE CURRENT vs SOURCE-TO-DRAIN VOLTAGE – 1 – 10 – 0.3 – 0.5 – 0.7 VSD – Source-to-Drain Voltage – V – 0.9 – 1.1 – 1.3 TJ = 25°C TJ = – 40°C TJ = 150°C Pulse Test Figure 9 0.2 0.1 0 – 1 – 3 – 5 – 7 0.3 0.4 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs GATE-TO-SOURCE VOLTAGE 0.5 – 9 – 11 – 13 – 15 VGS – Gate-to-Source Voltage – V ID = – 1 A TJ = 25°C Figure 10 – 1.2 – 1.1 – 1.3 – 1.4 GATE-TO-SOURCE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE – 1.5 – 50 0 50 100 150 – 1 – 0.9 TJ – Junction Temperature – °C ID = – 250 µA |
类似零件编号 - TPS1101YPW |
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类似说明 - TPS1101YPW |
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