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TPS1100YPW 数据表(PDF) 2 Page - Texas Instruments |
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TPS1100YPW 数据表(HTML) 2 Page - Texas Instruments |
2 / 10 page TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages. TPS1100Y chip information This chip, when properly assembled, displays characteristics similar to the TPS1100. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10% ALL DIMENSIONS ARE IN MILS 57 64 TPS1100Y (2) (6) (1) (3) (7) (8) (5) (4) DRAIN SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN (2) (1) (3) (4) (6) (7) (8) (5) |
类似零件编号 - TPS1100YPW |
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类似说明 - TPS1100YPW |
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