1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC

307

BC

308C

BC

309

Unit

Collector – Emitter Voltage

VCEO

–45

–25

–25

Vdc

Collector – Base Voltage

VCBO

–50

–30

–30

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

BC307

(IC = –2.0 mAdc, IB = 0)

BC308C

BC309B

V(BR)CEO

–45

–25

–25

—

—

—

—

—

—

Vdc

Emitter – Base Breakdown Voltage

BC307

(IE = –100 mAdc, IC = 0)

BC308C

BC309B

V(BR)EBO

–5.0

–5.0

–5.0

—

—

—

—

—

—

Vdc

Collector–Emitter Leakage Current

(VCES = –50 V, VBE = 0)

BC307

(VCES = –30 V, VBE = 0)

BC308C

BC309B

(VCES = –50 V, VBE = 0) TA = 125°C

BC307

(VCES = –30 V, VBE = 0) TA = 125°C

BC308C

BC309B

ICES

—

—

—

—

—

—

–0.2

–0.2

–0.2

–0.2

–0.2

–0.2

–15

–15

–15

–4.0

–4.0

–4.0

nAdc

µA

Order this document

by BC307/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC307,B,C

BC308C

BC309B

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER