L9014TLT1G datasheet(2/4 Pages) LRC

部件名	L9014TLT1G

功能描述	General Purpose Transistors

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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2 / 4 page

LESHAN RADIO COMPANY, LTD.

L9014*LT1G

ELECTRICAL CHARACTERISTICS (TA

=25

oC unless otherwise noted)

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

V(BR)CEO

45

-

V

(IC=1.0mA)

Emitter-Base Breakdown Voltage

V(BR)EBO

5

-

V

(IE=100 A)

Collector-Base Breakdown Voltage

V(BR)CBO

50

-

V

(IC=100 A)

Collector Cutoff Current (VCB=40V)

ICBO

-

100

nA

Emitter Cutoff Current (VEB=3V)

IEBO

100

nA

ON CHARACTERISTICS

DC Current Gain

(IC=1mA, VCE=5V)

HFE

150

-

1000

Collector-Emitter Saturation Voltage

(IC=100mA,IB=5mA)

VCE

-

0.3

V

NOTE:

*

Q

R

S

T

HFE

150~300

200~400

300~600

400~1000

Characteristic

2/4

类似零件编号 - L9014TLT1G

制造商	部件名	数据表	功能描述
Leshan Radio Company	L9014TLT1G	51Kb / 3P	General Purpose Transistors NPN Silicon
	L9014TLT1G	84Kb / 4P	General Purpose Transistors NPN Silicon
	L9014TLT1G	105Kb / 4P	General Purpose Transistors

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