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2SA1036 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1036 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual 2SA1036 PNP Silicon General Purpose Transistor Collector 3 1 Base 2 Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 3 FEATURES . Large IC, IC MAX.=-500mA . Low VCE(Sat), Ideal for low-voltage operation . Small Package. (MAXIMUM RATINGS* TA=25 ℃ ) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PD Total Device Dissipation 150 mW TJ, Tstg Junction and Storage Temperature -55 ~125 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100u A,IE=0 - 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 - 32 V Emitter-base breakdown voltage V(BR)EBO IE=-100 u A,IC=0 -5 V Collector cut-off current ICBO VCB=- 20V,IE=0 - 1 u A Emitter cut-off current IEBO VEB=- 4V,IC=0 - 1 u A DC current gain hFE VCE=- 3V,IC=-10mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0. 4 V Transition frequency fT VCE=-5V,IC=-20mA,f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-2 70 180-390 Marking HP HQ HR . RoHS Compliant Product 01-Jun-2002 Rev. A Page 1 of 2 A suffix of "-C" specifies halogen & lead-free |
类似零件编号 - 2SA1036 |
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类似说明 - 2SA1036 |
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