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SI4164DY 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4164DY 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 68870 S-82015-Rev. A, 01-Sep-08 Vishay Siliconix Si4164DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.005 0.010 0.015 0.020 0.025 012 345 67 8 910 TJ =25 °C TJ = 125 °C ID =15A VGS - Gate-to-Source Voltage (V) 0 40 80 120 160 200 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0 0 1 0 1 1 1 0 . 0 0.01 10 0.1 0.1 1ms TC = 25 °C Single Pulse 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 10 s Limited byRDS(on)* 1 s |
类似零件编号 - SI4164DY |
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类似说明 - SI4164DY |
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