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TIP112 数据表(PDF) 1 Page - Dc Components |
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TIP112 数据表(HTML) 1 Page - Dc Components |
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1 / 1 page TIP112 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter TO-220AB Dimensions in inches and (millimeters) .625(15.87) .570(14.48) .562(14.27) .500(12.70) .055(1.39) .045(1.15) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 (2.54) Typ .024(0.60) .014(0.35) Φ.151 Φ(3.83) Typ 1 2 3 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 100 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA, IB=0 Collector Cutoff Current ICBO - - 1 mA VCB=100V, IE=0 ICEO - - 2 mA VCE=50V, IB=0 Emitter Cutoff Current IEBO - - 2 mA VEB=5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 2.5 V IC=2A, IB=8mA Base-Emitter On Voltage(1) VBE(on) - - 2.8 V IC=2A, VCE=4V DC Current Gain(1) hFE1 1K - - - IC=1A, VCE=4V hFE2 500 - - - IC=2A, VCE=4V Output Capacitance Cob - - 200 pF VCE=10V, f=0.1MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (continuous) IC 4 A Collector Current (peak) IC 6 A Total Power Dissipation(TC=25oC) PD 50 W Total Power Dissipation PD 2 W Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) |
类似零件编号 - TIP112 |
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类似说明 - TIP112 |
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