数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

2N3773 数据表(PDF) 1 Page - Dc Components

部件名 2N3773
功能描述  TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Download  1 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DCCOM [Dc Components]
网页  http://www.dccomponents.com
标志 DCCOM - Dc Components

2N3773 数据表(HTML) 1 Page - Dc Components

  2N3773 Datasheet HTML 1Page - Dc Components  
Zoom Inzoom in Zoom Outzoom out
 1 / 1 page
background image
2N3773
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high power audio, disk head positioners,
and other linear applications.
Pinning
1 = Base
2 = Emitter
Case = Collector
TO-3
Dimensions in inches and (millimeters)
.225(5.72)
.205(5.20)
.169(4.30)
.151(3.84)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
.043(1.09)
.038(0.97)
.440(11.18)
.420(10.67)
1.050(26.67)
1.011(25.68)
.169(4.30)
.151(3.84)
1.573
(39.96)
Max
.875(22.23)
.759(19.28)
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
.135
(3.43)
Max
1
2
Case: Collector
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
140
V
VCEX
160
V
Emitter-Base Voltage
VEBO
7
V
Collector Current (continuous)
IC
16
A
Collector Current (peak)
IC
30
A
Total Power Dissipation(TC=25oC)
PD
150
W
Junction Temperature
TJ
+200
o
C
Storage Temperature
TSTG
-65 to +200
o
C
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
VCEO(sus)
140
-
-
V
IC=0.2A, IB=0
Collector-Emitter Sustaining Voltage
VCEX(sus)
160
-
-
V
IC=0.1A, VBE(off)=1.5V, RBE=100
VCER(sus)
150
-
-
V
IC=0.1A, RBE=100
ICEO
-
-
10
mA
VCE=120V, IB=0
Collector Cutoff Current
ICEX
-
-
2
mA
VCE=140V, VBE(off)=1.5V
-
-
10
mA
VCE=140V, VBE(off)=1.5V, TC=150oC
ICBO
-
-
2
mA
VCB=140V, IE=0
Emitter Cutoff Current
IEBO
-
-
5
mA
VBE=7V, IC=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
-
-
1.4
V
IC=8A, IB=0.8A
VCE(sat)2
-
-
4
V
IC=16A, IB=3.2A
Base-Emitter On Voltage(1)
VBE(on)
-
-
2.2
V
IC=8A, VCE=4V
DC Current Gain(1)
hFE1
15
-
60
-
IC=8A, VCE=4V
hFE2
5
-
-
-
IC=16A, VCE=4V
Second Breakdown Collector with
Is/b
1.5
-
-
A
VCE=100V, t=1.0s, Non-repetitive
Base Forward Bias
Small-Signal Current Gain
hfe
40
-
-
-
IC=1A, VCE=4V, f=1KHz
Magnitude of Common-Emitter Small-Signal,
I hfe I
4
-
-
-
IC=1A, f=50KHz
Short-Circuit, Forward Current Transfer Ratio
(1)Pulse Test: Pulse Width
300
µs, Duty Cycle 2%
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)


类似零件编号 - 2N3773

制造商部件名数据表功能描述
logo
Mospec Semiconductor
2N3773 MOSPEC-2N3773 Datasheet
143Kb / 3P
   POWER TRANSISTORS(16A,140V,150W)
logo
Savantic, Inc.
2N3773 SAVANTIC-2N3773 Datasheet
111Kb / 3P
   Silicon NPN Power Transistors
logo
Central Semiconductor C...
2N3773 CENTRAL-2N3773 Datasheet
84Kb / 1P
   COMPLEMENTARY SILICON POWER TRANSITORS
logo
ON Semiconductor
2N3773 ONSEMI-2N3773 Datasheet
205Kb / 6P
   COMPLEMENTARY POWER TRANSISTORS
1995 REV 7
logo
Quanzhou Jinmei Electro...
2N3773 JMNIC-2N3773 Datasheet
178Kb / 3P
   Silicon NPN Power Transistors
More results

类似说明 - 2N3773

制造商部件名数据表功能描述
logo
Dc Components
MPSA42M DCCOM-MPSA42M Datasheet
213Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DC8050S DCCOM-DC8050S Datasheet
240Kb / 2P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DC9014 DCCOM-DC9014 Datasheet
215Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXT3904 DCCOM-DXT3904 Datasheet
237Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DXTA44 DCCOM-DXTA44 Datasheet
237Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
DC9013 DCCOM-DC9013 Datasheet
215Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
BD237D DCCOM-BD237D Datasheet
218Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1959 DCCOM-2SC1959 Datasheet
214Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SD667A DCCOM-2SD667A Datasheet
215Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SD965 DCCOM-2SD965 Datasheet
213Kb / 1P
   TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
More results


Html Pages

1


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com