数据搜索系统,热门电子元器件搜索 |
|
2SD1399 数据表(PDF) 2 Page - Savantic, Inc. |
|
2SD1399 数据表(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1399 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector- emitter breakdown voltage IC=100mA; RBE=< 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V 3 MHz tf Fall time IC=5A;IB1=1A; IB2=-2A, VCC=200V; RL=40C 0.7 µs VF Diode forward voltage IEC=6A 2.0 V |
类似零件编号 - 2SD1399 |
|
类似说明 - 2SD1399 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |