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2SC3086 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3086 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3086 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=∞ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.3A ; VCE=5V 15 50 hFE-2 DC current gain IC=1.5A ; VCE=5V 8 fT Transition frequency IC=0.3A ; VCE=10V 18 MHz COB Output capacitance f=10MHz ; VCB=10V 40 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 3.0 μs tf Fall time VCC=200V; IC=2A IB1=0.4A;IB2=-0.4A; RL=100Ω 1.0 μs hFE-1 classifications L M N 15-30 20-40 30-50 |
类似零件编号 - 2SC3086 |
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类似说明 - 2SC3086 |
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