STM8360T datasheet(2/11 Pages) SAMHOP

部件名	STM8360T

功能描述	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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制造商	SAMHOP [SamHop Microelectronics Corp.]

网页	http://www.samhop.com.tw

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4 Symbol

Min

Typ

Max

Units

BVDSS

40

V

1

IGSS

±100

nA

VGS(th)

1.0

V

23

gFS

17

S

VSD

CISS

780

pF

COSS

60

pF

CRSS

50

pF

Qg

14

nC

14

nC

Qgs

18.5

nC

Qgd

20

tD(ON)

14

ns

tr

1.8

ns

tD(OFF)

3.9

ns

tf

ns

Gate-Drain Charge

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=1A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=20V,ID=6.6A,VGS=10V

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=6.6A

VDS=5V , ID=6.6A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

3

VGS=4.5V , ID=5.3A

29

33

45

m ohm

c

f=1.0MHz

c

VDS=20V,ID=6.6A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=1.7A

0.77

1.2

V

STM8360T

www.samhop.com.tw

Nov,21,2008

2

nC

VDS=20V,ID=6.6A,VGS=4.5V

6.9

1.5

b

IS

Maximum Continuous Drain-Source Diode Forward Current

A

1.7

Ver 1.0

类似零件编号 - STM8360T

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STM8360T	2Mb / 14P	N- and P-Channel 60-V (D-S) MOSFET

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