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STB8444 数据表(PDF) 1 Page - SamHop Microelectronics Corp. |
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STB8444 数据表(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STB/P8444 Symbol VDS VGS IDM EAS W A P D °C 62 -55 to 150 ID Units Parameter 40 80 264 °C/W V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS mJ PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 40V 80A 4.8 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-263 Package. N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b Sigle Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case R JC www.samhop.com.tw Mar,26,2008 1 Details are subject to change without notice. TC=25°C STB SERIES TO-263(DD-PAK) G S D STP SERIES TO-220 S D G S G D A 62.5 °C/W Thermal Resistance, Junction-to-Ambient R JA 1.8 d 306 Ver 1.0 |
类似零件编号 - STB8444 |
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类似说明 - STB8444 |
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