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LTC3411A 数据表(PDF) 3 Page - Linear Technology |
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LTC3411A 数据表(HTML) 3 Page - Linear Technology |
3 / 20 page LTC3411A 3 3411afa ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C, VIN = 3.6V, RT = 125k unless otherwise specified. (Note 2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS IS Input DC Supply Current (Note 4) Active Mode Sleep Mode Shutdown VSYNC/MODE = 3.6V, VFB = 0.75V VSYNC/MODE = 3.6V, VFB = 0.84V VSHDN/RT = 3.6V 330 40 0.1 450 60 1 μA μA μA VSHDN/RT Shutdown Threshold High Active Oscillator Resistor VIN – 0.6 125k VIN – 0.4 1M V Ω fOSC Oscillator Frequency RT = 125k (Note 7) 2.25 2.5 2.8 4 MHz MHz fSYNC Synchronization Frequency (Note 7) 0.4 4 MHz ILIM Peak Switch Current Limit VFB = 0.5V 1.6 2.1 2.6 A RDS(ON) Top Switch On-Resistance MS Package DD Package (Note 6) 0.15 0.15 0.18 Ω Ω Bottom Switch On-Resistance MS Package DD Package (Note 6) 0.13 0.13 0.16 Ω Ω ISW(LKG) Switch Leakage Current VIN = 5.5V, VSHDN/RT = 5.5V, VSW = 0V or 5.5V 0.01 1 μA VUVLO Undervoltage Lockout Threshold VIN Ramping Down 1.8 2.1 2.4 V PGOOD Power Good Threshold VFB Ramping Up from 0.68V to 0.8V VFB Ramping Down from 0.92V to 0.8V –5 5 –7 7 % % Power Bad Threshold VFB Ramping Down from 0.8V to 0.68V VFB Ramping Up from 0.8V to 0.9V –10 10 –12 12 % % RPGOOD Power Good Pull-Down On-Resistance 15 30 Ω PGOOD Blanking VFB Step from 0V to 0.8V VFB Step from 0.8V to 0V 40 105 μs μs VSYNC-MODE Pulse Skip Force Continous Burst 0.93 VIN – 0.75 0.63 VIN – 1.05 V V V tSOFT-START 10% to 90% of Regulation 0.5 0.8 1.0 ms Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3411AE is guaranteed to meet performance specifications from 0°C to 85°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3411AI is guaranteed over the full –40°C to 125°C operating junction temperature range. Note 3: The LTC3411A is tested in a feedback loop which servos VFB to the midpoint for the error amplifier (VITH = 0.7V). Note 4: Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. Note 5: TJ is calculated from the ambient TA and power dissipation PD according to the following formulas: LTC3411AEDD: TJ = TA + (PD • 43°C/W) LTC3411AEMS: TJ = TA + (PD • 120°C/W) Note 6: For the DD package, switch on-resistance is sampled at wafer level measurements and assured by design, characterization and correlation with statistical process controls. Note 7: 4MHz operation is guaranteed by design but not production tested and is subject to duty cycle limitations (see Applications Information). Note 8: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. |
类似零件编号 - LTC3411A |
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类似说明 - LTC3411A |
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