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AO4406AL 数据表(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4406AL 数据表(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 6 page General Description Features (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant 100% UIS Tested! - Halogen Free 100% R g Tested! Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 31 40 59 75 RθJL 16 24 ID = 12A RDS(ON) < 11.5mΩ TC=25°C 2 TC=70°C 22 100 Pulsed Drain Current C Continuous Drain Current Repetitive avalanche energy L=0.1mH C Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics t ≤ 10s °C/W Parameter RθJA V V ±20 Gate-Source Voltage Drain-Source Voltage 30 AO4406AL N-Channel Enhancement Mode Field Effect Transistor Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. RDS(ON) < 15.5mΩ VDS (V) = 30V mJ Avalanche Current C 24 A A ID 12 10 TC=25°C TC=70°C Power Dissipation B PD W 3.1 Maximum Junction-to-Lead Steady-State °C/W Steady-State °C/W Maximum Junction-to-Ambient A D Units Maximum Junction-to-Ambient A G D S SOIC-8 G S D G S S S D D D D Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
类似零件编号 - AO4406AL |
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类似说明 - AO4406AL |
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