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BU2525DX 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2525DX 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2525DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.1 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 72 218 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 11 hFE-2 DC Current Gain IC= 8A; VCE= 5V 5 7 9.5 VECF C-E Diode Forward Voltage IF= 8A 2.0 V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 145 pF Switching times tstg Storage Time 4.0 μs tf Fall Time IC= 8A , IB(end)= 1.1A; LB= 2.5μH -VBB= 4V; (-dIB/dt= 1.6A/μs) 0.35 μs isc Website:www.iscsemi.cn |
类似零件编号 - BU2525DX |
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类似说明 - BU2525DX |
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