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MJ13091 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ13091 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT MJ13090 650 VCEV Collector-Emitter Voltage MJ13091 750 V MJ13090 400 VCEO(SUS) Collector-Emitter Voltage MJ13091 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous 5 A IBM Base Current-Peak 10 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website:www.iscsemi.cn |
类似零件编号 - MJ13091 |
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类似说明 - MJ13091 |
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