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MJ1000 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ1000 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 10 A IB B Base Current-Continunous 0.1 A PC Collector Power Dissipation @TC=25℃ 90 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.94 ℃/W isc Website:www.iscsemi.cn |
类似零件编号 - MJ1000 |
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类似说明 - MJ1000 |
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