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BU2520DX 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2520DX 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2520DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 13.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 1.1 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 100 300 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 13 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 5 7 9.5 VECF C-E Diode Forward Voltage IF= 6A 2.2 V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 115 pF Switching times tstg Storage Time 5.5 μs tf Fall Time IC= 6A , IB(end)= 1.0A; LB= 5.3μH -VBB= 4V; (-dIB/dt= 0.8A/μs) 0.5 μs isc Website:www.iscsemi.cn |
类似零件编号 - BU2520DX |
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类似说明 - BU2520DX |
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