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BFR91A 数据表(PDF) 1 Page - Vishay Siliconix |
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BFR91A 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 8 page BFR91A Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (8) Document Number 85031 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 94 9308 1 3 2 BFR91A Marking: BFR91A Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base 13623 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 2 V Collector current IC 50 mA Total power dissipation Tamb ≤ 60 °C Ptot 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg –65 to +150 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu RthJA 300 K/W |
类似零件编号 - BFR91A |
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类似说明 - BFR91A |
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