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2SK3435 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3435 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SK3435 Features Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS =10V, ID = 40A) RDS(on)2 =22 m MAX. (VGS =4V, ID = 40A) Low Ciss:Ciss =3200 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 80 A Idp * 320 A Power dissipation TC=25 84 TA=25 1.5 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=40A 21 43 S RDS(on)1 VGS=10V,ID=40A 11 14 m RDS(on)2 VGS=4V,ID=40A 16 22 m Input capacitance Ciss 3200 pF Output capacitance Coss 520 pF Reverse transfer capacitance Crss 260 pF Turn-on delay time ton 80 ns Rise time tr 1200 ns Turn-off delay time toff 200 ns Fall time tf 350 ns Total Gate Charge QG 60 nC Gate to Source Charge QGS 10 nC Gate to Drain Charge QGD 16 nC VDS=10V,VGS=0,f=1MHZ ID=40A,VGS(on)=10V,RG=10 ,VDD=30V Draintosourceon-stateresistance ID =80A, VDD =48V, VGS =10V |
类似零件编号 - 2SK3435 |
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类似说明 - 2SK3435 |
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