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1N4756A 数据表(PDF) 1 Page - Vishay Siliconix |
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1N4756A 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page 1N4728A...1N4761A Vishay Telefunken Rev. 2, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85587 Silicon Power Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications Voltage stabilization 94 9369 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation Tambx50°C PV 1 W Z–current IZ PV/VZ mA Junction temperature Tj 200 °C Storage temperature range Tstg –65...+200 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=9.5mm (3/8”), TL=constant RthJA 100 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.2 V |
类似零件编号 - 1N4756A |
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类似说明 - 1N4756A |
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