数据搜索系统,热门电子元器件搜索 |
|
2SJ356 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
|
2SJ356 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type MOSFET 1 www.kexin.com.cn 1.80+0.1 -0.1 4.50+0.1 -0.1 0.53+0.1 -0.1 0.48+0.1 -0.1 1.50+0.1 -0.1 0.44+0.1 -0.1 3.00+0.1 -0.1 SOT-89 Unit: mm 1. Base 2. Collector 3. Emiitter 1. Source 2. Drain 3. Gate 1 2 3 1Gate 2Drain 3Source MOS Field Effect Transistors 2SJ356 Features Low on-state resistance RDS(on)=0.95 (VGS=-4V,ID=-1.0A) RDS(on)=0.50 (VGS=-10V,ID=-1.0A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Draintosourcevoltage VDSS -60 V Gate to source voltage VGSS -20,+10 V Drain current (DC) ID 2.0 A Drain current(pulse) * ID 4 A Power dissipation PD 2.0 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 *PW 10 s; d 1%. |
类似零件编号 - 2SJ356 |
|
类似说明 - 2SJ356 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |