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2PB709ASW 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2PB709ASW
功能描述  PNP General Purpose Transistor
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2PB709ASW 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2PB709ASW Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
1 Emitter
2 Base
3 Collector
PNP General Purpose Transistor
2PB709AW
Features
High collector current (max. 100 mA).
Low collector-emitter saturation voltage (max. 500 mV).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-45
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
Total power dissipation
Ptot
200
mW
Storage temperature
Tstg
-65to+150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65to+150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
IE =0; VCB = -45 V
-10
nA
IE =0; VCB =-45 V; Tj =150
-5
ìA
Emitter cut-off current
IEBO
IC =0; VEB =-5V
-10
nA
DC current gain
2PB709AQW
2PB709ARW
2PB709ASW
hFE
IC =-2mA; VCE =-10 V
160
210
290
260
340
460
Collector-emitter saturation voltage
VCE(sat) IC =-100mA; IB = -10 mA; *
-500
mV
Collector capacitance
Cc
IE =ie=0; VCB = -10 V;f= 1 MHz
5
pF
Transition frequency
2PB709AQW
2PB709ARW
2PB709ASW
fT
IC =-1mA; VCE = -10 V;f = 100 MHz
60
70
80
MHz
* Pulse test: tp
300 ìs; ä
0.02.
hFE Classification
TYPE
2PB709AQW
2PB709ARW
2PB709ASW
Marking
N5
N7
N9


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