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2SC2716 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC2716 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon NPN Epitaxial 2SC2716 Features Low noise figure: NF = 3.5dB (max) (f = 1 MHz). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4V Collector current IC 100 mA Emitter current IE -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature range Tstg -55to+125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB =20V, IE =0 0.1 ìA Emitter cut-off current IEBO VEB =2V, IC =0 1.0 ìA DC current gain hFE VCE =12V, IC = 2 mA 40 240 Collector-emitter saturation voltage VCE (sat) IC =10mA, IB =1mA 0.4 V Base-emitter saturation voltage VBE (sat) IC =10mA, IB =1mA 1.0 V Transition frequency fT VCE = 10V, IC = 2 mA 80 120 MHz Collector output capacitance Cob VCB = 10V, IE = 0 , f = 1 MHz 2.2 3.0 pF Collector-base time constant Cc.rbb' VCE = 10V, IE = -1 mA,f= 30 MHz 30 50 ps Power gain Gpe VCC = 10V, IE =-1mA , f = 1MHz, Rg=50Ù 2.0 3.5 dB hFE Classification Marking FR FO FY hFE 40 80 70 140 120 240 |
类似零件编号 - 2SC2716 |
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类似说明 - 2SC2716 |
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