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2SA1417 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SA1417
功能描述  High-Voltage Switching Applications
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1417 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SA1417 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SA1417 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd 2SA1417 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
www.kexin.com.cn
1
High-Voltage Switching Applications
2SA1417
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-2
A
Collector Current (Pulse)
ICP
-3
A
PC
500
mW
PC*
1.5
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55to+150
* Mounted on ceramic board (250 mm
2 x 0.8 mm)
Collector Power Dissipation
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector Cut-off Current
ICBO
VCB = -100V , IE = 0
-100
nA
Emitter Cut-off Current
IEBO
VEB =-4V , IC = 0
-100
nA
Collector-Base Breakdown Voltage
V(BR)CBO IC = -10uA , IE = 0
-120
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC =-1mA , RBE =
-100
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE = -10uA , IC =0
-6
V
DC Current Gain
hFE
VCE =-5V , IC = -100mA
100
400
Collector-Emitter Saturation Voltage
VCE(sat) IC =-1A , IB = -100mA
-0.22
-0.6
V
Base-Emitter Saturation Voltage
VBE(sat) IC =-1A , IB = -100mA
-0.85
-1.2
V
Gain-Bandwidth Product
fT
VCE = -10V , IC = -100mA
120
MHz
Collector Output Capacitance
Cob
VCB = -10V , IE = 0 , f = 1MHz
25
pF
Turn-On Time
ton
80
Storage Time
tstg
750
Fall Time
tf
40
ns
See Test Circuit.


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