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TC4423EOE 数据表(PDF) 3 Page - TelCom Semiconductor, Inc |
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TC4423EOE 数据表(HTML) 3 Page - TelCom Semiconductor, Inc |
3 / 7 page 4-239 TELCOM SEMICONDUCTOR, INC. 7 6 5 4 3 1 2 8 3A DUAL HIGH-SPEED POWER --MOSFET DRIVERS TC4423 TC4424 TC4425 Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching Time OUTPUT INPUT 0.1 µF CERAMIC +5V INPUT 10% 90% 10% 90% 10% 90% 16V OUTPUT tD1 tF C = 1800pF L 1 µF WIMA MKS-2 VDD = 16V 0V 0V TC4423 (1/2 TC4425) Test Circuit 1 2 tD2 tR INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec 90% 10% 10% 10% tD1 +5V INPUT 16V OUTPUT 0V 0V 90% 90% OUTPUT INPUT 0.1 µF CERAMIC C = 1800pF L 1 µF WIMA MKS-2 VDD = 16V TC4424 (1/2 TC4425) Test Circuit 1 2 tD2 tR tF INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec ELECTRICAL CHARACTERISTICS (Cont.): Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage VDD – 0.025 — — V VOL Low Output Voltage — — 0.025 V RO Output Resistance, High IOUT = 10 mA, VDD = 18V — 3.7 8 Ω RO Output Resistance, Low IOUT = 10 mA, VDD = 18V — 4.3 8 Ω IPK Peak Output Current — 3 — A IREV Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A Withstand Reverse Current t ≤ 300 µsec Switching Time (Note 1) tR Rise Time Figure 1, CL = 1800 pF — 28 60 nsec tF Fall Time Figure 1, CL = 1800 pF — 32 60 nsec tD1 Delay Time Figure 1, CL = 1800 pF — 32 100 nsec tD2 Delay Time Figure 1, CL = 1800 pF — 38 100 nsec Power Supply IS Power Supply Current VIN = 3V (Both Inputs) — 2 3.5 mA VIN = 0V (Both Inputs) — 0.2 0.3 NOTE: 1. Switching times guaranteed by design. |
类似零件编号 - TC4423EOE |
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类似说明 - TC4423EOE |
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