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BF840 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BF840 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Medium Frequency Transistor BF840 Features Low current (max. 25 mA). Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 4V Collector current IC 25 mA Peak collector current ICM 25 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65to+150 Junction temperature Tj 150 Operating ambient temperature Ramb -65to+150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO IE =0; VcB = 20 V 100 nA Emitter cutoff current IEBO Ic = 0; VEB = 4 V 100 nA DC current gain hFE Ic = 1 mA; VcE = 10 V 67 222 Base to emitter voltage VBE Ic = 1 mA; VcE = 10 V 675 725 775 mV Feedback capacitance Cre Ic = 0; VcB =10V; f = 1MHz 0.3 pF Transition frequency fT Ic = 1 mA; VcE = 10 V; f = 100 MHz 380 MHz Marking Marking NC |
类似零件编号 - BF840 |
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类似说明 - BF840 |
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