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2SD1419 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1419 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page 2 SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC =10ìA, IE = 0 120 V Collector to emitter breakdown voltage V(BR)CEO IC =1mA, RBE = 100 V Emitter to base breakdown voltage V(BR)EBO IE=10ìA, IC =0 5 V Collector cutoff current ICBO VCB = 100 V, IE =0 10 ìA VCE =5V, IC = 150 mA* 60 200 VCE =5V, IC = 500 mA* 30 Collector to emitter saturation voltage VCE(sat) IC = 500 mA, IB =50mA* 1 V Base to emitter voltage VBE VCE =5V, IC = 150 mA* 1.5 V Gain bandwidth product fT VCE =5V, IC = 150 mA* 140 MHz Collector output capacitance Cob VCB =10V, IE = 0, f = 1 MHz 12 pF *Pulse test hFE DC current transfer ratio 2SD1419 hFE Classification Marking DD DE hFE 60 120 100 200 |
类似零件编号 - 2SD1419 |
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类似说明 - 2SD1419 |
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