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2SD1421 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1421 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn Silicon NPN Epitaxial 2SD1421 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak current iC(peak)*1 3 A Collector power dissipation PC*2 1 W Junction temperature Tj 150 Storage temperature Tstg -55to150 *1 PW 10ms, duty cycle 20% *2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC =1mA, IE = 0 180 V Collector to emitter breakdown voltage V(BR)CEO IC =10mA, RBE = 160 V Emitter to base breakdown voltage V(BR)EBO IE=1mA, IC =0 5 V Collector cutoff current ICBO VCB = 160 V, IE =0 10 ìA VCE =5V, IC = 0.15A 60 200 VCE =5V, IC =0.5A 30 Collector to emitter saturation voltage VCE(sat) IC =0.5A, IB = 50 mA,pulse 1.0 V Base to emitter voltage VBE VCE =5V, IC = 0.15mA,pulse 0.9 V hFE DC current transfer ratio hFE Classification Marking ED EE hFE 60 120 100 200 |
类似零件编号 - 2SD1421 |
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类似说明 - 2SD1421 |
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