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IRF830FP 数据表(PDF) 2 Page - Suntac Electronic Corp. |
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IRF830FP 数据表(HTML) 2 Page - Suntac Electronic Corp. |
2 / 4 page IRF830 POWER MOSFET P Page 2 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CIRF830 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) V(BR)DSS 500 V Drain-Source Leakage Current (VDS = 500V, VGS = 0 V) IDSS 25 A Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 A) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3) RDS(on) 1.5 Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3) gFS 2.8 mhos Input Capacitance Ciss 520 730 pF Output Capacitance Coss 170 240 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 11 20 pF Turn-On Delay Time td(on) 7.0 10 ns Rise Time tr 9.0 20 ns Turn-Off Delay Time td(off) 20 40 ns Fall Time (VDD = 250 V, ID = 5 A, RG = 9.1 , VGS = 10 V) (Note 3) tf 10 20 ns Total Gate Charge Qg 10 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge (VDS = 400V, ID = 5A VGS = 10 V) (Note 3) Qgd 3 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Qrr 1.8 µC Forward Turn-On Time ton ** Reverse Recovery Time IF = 5A, di/dt = 100A/µs , TJ = 25 trr 415 ns Diode Forward Voltage IS = 5A, VGS = 0 V VSD 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25 (3) Pulse.Test:.Duty Cycle 2% , Pulse.Width 300µs ** Negligible, Dominated by circuit inductance |
类似零件编号 - IRF830FP |
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类似说明 - IRF830FP |
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