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IRF634B 数据表(PDF) 1 Page - Suntac Electronic Corp. |
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IRF634B 数据表(HTML) 1 Page - Suntac Electronic Corp. |
1 / 6 page IRF634B POWER MOSFET Page 1 GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PIN CONFIGURATION SYMBOL TO-220 Top View 1 23 D S G N-Channel MOSFET ORDERING INFORMATION Part Number Package IRF634B...............................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current Continuous Pulsed (Note 1) ID IDM 8.5 36 A Gate-to-Source Voltage Continue VGS ±30 V Total Power Dissipation Derate above 25 PD 74 0.59 W W/ Single Pulse Avalanche Energy (Note 2) EAS 200 mJ Avalanche Current (Note 1) IAR 8.5 A Repetitive Avalanche Energy (Note 1) EAR 7.4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.5 V/ns Operating and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Resistance Junction to Case Junction to Ambient JC JA 1.70 62 /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 |
类似零件编号 - IRF634B |
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类似说明 - IRF634B |
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