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MC13213 数据表(PDF) 62 Page - Freescale Semiconductor, Inc

部件名 MC13213
功能描述  ZigBee?? Compliant Platform - 2.4 GHz Low Power Transceiver for the IEEE짰 802.15.4 Standard plus Microcontroller
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MC13213 数据表(HTML) 62 Page - Freescale Semiconductor, Inc

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MC13211/212/213 Technical Data, Rev. 1.5
62
Freescale Semiconductor
6.4.4
FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory. Program and erase operations do not require any special power sources other than the normal
VDD supply.
Table 21. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
Vprog/erase
2.1
3.6
V
Supply voltage for read operation
0 < fBus < 8 MHz
0 < fBus < 20 MHz
VRead
1.8
2.08
3.6
3.6
V
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
Internal FCLK period (1/FCLK)
tFcyc
56.67
μs
Byte program time (random location)(2)
tprog
9tFcyc
Byte program time (burst mode)(2)
tBurst
4tFcyc
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
Mass erase time(2)
tMass
20,000
tFcyc
Program/erase endurance3
TL to TH = –40°C to + 85°C
T = 25
°C
3 Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for
Nonvolatile Memory.
10,000
100,000
cycles
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Non-volatile Memory.
tD_ret
15
100
years


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