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TIP110 Datasheet(数据表) 2 Page - STMicroelectronics

部件型号  TIP110
说明  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
下载  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
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TIP110 Datasheet(HTML) 2 Page - STMicroelectronics

   
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
2.5
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICEO
Collector Cut -of f
Current (IB =0)
VCE = Half Rated VCEO
2mA
ICBO
Collector Cut -of f
Current (IE =0)
VCB =Rated VCBO
1mA
IEBO
Emitt er Cut -of f Current
(IC =0)
VEB =5 V
2
mA
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
(IB =0)
IC =30 mA
for TIP110/115
for TIP112/117
60
100
V
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC =2 A
IB =8 mA
2.5
V
VBE
Base-Emitt er Voltage
IC =2 A
VCE =4 V
2.8
V
hFE
DC Current Gain
IC =1 A
VCE =4 V
IC =2 A
VCE =4 V
1000
500
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Areas
Derating Curve
TIP110/TIP112/TIP115/TIP117
2/6




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