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SMBG64 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SMBG64
功能描述  Surface Mount TRANSZORB® Transient Voltage Suppressors
Download  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SMBG64 数据表(HTML) 1 Page - Vishay Siliconix

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SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
Document Number: 88456
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-215AA (SMBG)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMBG10CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
600 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
DO-215AA (SMBG)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
PPPM
600
W
Peak pulse current with a 10/1000 µs waveform (1)
IPPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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