SM6T Series

Vishay General Semiconductor

Document Number: 88385

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• 600 W peak pulse power capability with a

10/1000 µs waveform

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Low inductance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

DEVICES FOR BI-DIRECTION APPLICATIONS

For

bi-directional

devices

use

CA

suffix

(e.g.

SM6T12CA).

Electrical characteristics apply in both directions.

PRIMARY CHARACTERISTICS

6.8 V to 220 V

600 W

5.0 W

100 A

150 °C

DO-214AA (SMB)

Notes:

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

PARAMETER

SYMBOL

VALUE

UNIT

600

W

See next table

A

5.0

W

100

A

Operating junction and storage temperature range

- 65 to +150

°C