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BF579 数据表(PDF) 1 Page - Vishay Siliconix |
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BF579 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BF579 / BF579R Document Number 85001 Rev. 1.5, 05-Sep-08 Vishay Semiconductors www.vishay.com 1 1 2 3 1 2 3 BF579 BF579R 19212 Electrostatic sensitive device. Observe precautions for handling. Not for new design, this product will be obsoleted soon Silicon PNP Planar RF Transistor Features • High transition frequency • Low distortion • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Mechanical Data Typ: BF579 Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BF579R Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector-base voltage - VCBO 20 V Collector-emitter voltage - VCEO 20 V Emitter-base voltage - VEBO 3V Collector current - IC 25 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C Parameter Test condition Symbol Value Unit Junction ambient 1) RthJA 450 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector cut-off current - VCE = 20 V, VBE = 0 - ICES 100 μA Collector-base cut-off current - VCB = 15 V, IE = 0 - ICBO 100 nA Emitter-base cut-off current - VEB = 3 V, IC = 0 - IEBO 10 μA Collector-emitter breakdown voltage - IC = 1 mA, IB = 0 - V(BR)CEO 20 V DC forward current transfer ratio - VCE = 10 V, - IC = 10 mA hFE 20 50 90 e3 |
类似零件编号 - BF579 |
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类似说明 - BF579 |
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