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SI5856DC 数据表(PDF) 5 Page - Vishay Siliconix

部件名 SI5856DC
功能描述  N-Channel 1.8-V (G-S) MOSFET With Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI5856DC 数据表(HTML) 5 Page - Vishay Siliconix

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Si5856DC
Vishay Siliconix
Document Number: 72234
S-50366—Rev. C, 28-Feb-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
10−3
10−2
1
10
600
10−1
10−4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10−3
10−2
110
10−1
10−4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
−50
−25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
1
10
Forward Voltage Drop
VF − Forward Voltage Drop (V)
0.0001
1
100
Reverse Current vs. Junction Temperature
TJ − Junction Temperature (_C)
0.001
0.01
0.1
10
20 V
TJ = 25_C
TJ = 150_C
10 V


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