SI5475DDC-T1-GE3 datasheet(5/7 Pages) VISHAY

部件名	SI5475DDC-T1-GE3

功能描述	P-Channel 12-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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5 / 7 page

Document Number: 68750

S-82487-Rev. B, 13-Oct-08

www.vishay.com

5

Vishay Siliconix

Si5475DDC

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

6

9

12

15

0

255075

100

125

150

TC - Case Temperature (°C)

Package Limited

Power Derating

0

1

2

3

4

5

6

25

50

75

100

125

150

TC - Case Temperature (°C)

类似零件编号 - SI5475DDC-T1-GE3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI5475DC	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02
Texas Instruments	Si5475DC	1Mb / 29P	[Old version datasheet] Triple-Supply Power Management IC for Powering FPGAs and DSPs
Vishay Siliconix	SI5475DC-T1	109Kb / 4P	P-Channel 12-V (D-S) MOSFET Rev. B, 05-Aug-02

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类似说明 - SI5475DDC-T1-GE3

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