SI3951DV-T1-E3 datasheet(1/7 Pages) VISHAY

部件名	SI3951DV-T1-E3

功能描述	Dual P-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Vishay Siliconix

Si3951DV

Document Number: 73700

S-71597-Rev. B, 30-Jul-07

www.vishay.com

1

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

PWM Optimized

•

100 % Rg tested

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a

Qg (Typ)

- 20

0.115 at VGS = - 4.5 V

- 2.7

3.2 nC

0.205 at VGS = - 2.5 V

- 2.0

Ordering Information: Si3951DV-T1-E3 (Lead (Pb)-free)

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

S2

G2

D2

P-Channel MOSFET

S1

G1

D1

P-Channel MOSFET

Marking Code

MG

XXX

Lot Traceability

and Date Code

Part # Code

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 130 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 2.7

A

TC = 70 °C

- 2.2

TA = 25 °C

- 2.5b, c

TA = 70 °C

- 2.0b, c

Pulsed Drain Current

IDM

10

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1.67

TA = 25 °C

- 0.95b, c

Maximum Power Dissipationa

TC = 25 °C

PD

2.0

W

TC = 70 °C

1.3

TA = 25 °C

1.14b, c

TA = 70 °C

0.73b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 sec

RthJA

93

110

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

75

90

RoHS

COMPLIANT

类似零件编号 - SI3951DV-T1-E3

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VBsemi Electronics Co.,...	SI3951DV-T1-GE3	520Kb / 9P	Dual P-Channel 20 V (D-S) MOSFET

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