SI3879DV datasheet(3/10 Pages) VISHAY

部件名	SI3879DV

功能描述	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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3 / 10 page

Document Number: 74958

S-71290–Rev. A, 02-Jul-07

www.vishay.com

3

Vishay Siliconix

Si3879DV

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 2.7

A

Pulse Diode Forward Current

ISM

- 20

Body Diode Voltage

VSD

IS = - 1.0 A, VGS = 0 V

- 0.75

- 1.2

V

Body Diode Reverse Recovery Time

trr

IF = - 3.5 A, di/dt = 100 A/µs, TJ = 25 °C

25

40

ns

Body Diode Reverse Recovery Charge

Qrr

12

20

nC

Reverse Recovery Fall Time

ta

9

ns

Reverse Recovery Rise Time

tb

16

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Forward Voltage Drop

VF

IF = 1 A

0.41

0.45

V

IF = 1 A, TJ = 125 °C

0.36

0.41

Maximum Reverse Leakage Current

Irm

Vr = 5 V

0.015

0.08

mA

Vr = 5 V, TJ = 85 °C

0.50

5.00

Vr = 20 V

0.02

0.10

Vr = 20 V, TJ = 85 °C

0.7

7.00

Vr = 20 V, TJ = 125 °C

550

Junction Capacitance

CT

Vr = 10 V

60

pF

类似零件编号 - SI3879DV

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI3879DV-T1-GE3	568Kb / 9P	Dual P-Channel 20 V (D-S) MOSFET

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类似说明 - SI3879DV

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