SI3590DV-T1-E3 datasheet(2/9 Pages) VISHAY

部件名	SI3590DV-T1-E3

功能描述	N- and P-Channel 30-V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

2 / 9 page

www.vishay.com

2

Document Number: 72032

S-60422-Rev. B, 20-Mar-06

Vishay Siliconix

Si3590DV

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.5

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

N-Ch

± 100

nA

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

N-Ch

1

µA

VDS = - 30 V, VGS = 0 V

P-Ch

- 1

VDS = 30 V, VGS = 0 V, TJ = 55 °C

N-Ch

5

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

5

A

VDS ≤ - 5 V, VGS = - 4.5 V

P-Ch

- 5

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 3 A

N-Ch

0.062

0.077

Ω

VGS = - 4.5 V, ID = - 2 A

P-Ch

0.135

0.170

VGS = 2.5 V, ID = 2 A

N-Ch

0.095

0.120

VGS = - 2.5 V, ID = - 1.2 A

P-Ch

0.235

0.300

Forward Transconductancea

gfs

VDS = 5 V, ID = 3 A

N-Ch

10

S

VDS = - 5 V, ID = - 2 A

P-Ch

5

Diode Forward Voltagea

VSD

IS = 1.05 A, VGS = 0 V

N-Ch

0.80

1.10

V

IS = - 1.05 A, VGS = 0 V

P-Ch

- 0.83

- 1.10

Dynamicb

Total Gate Charge

Qg

N-Channel

VDS = 15 V, VGS = 4.5 V, ID = 2 A

P-Channel

VDS = - 15 V, VGS = - 4.5 V, ID = - 2 A

N-Ch

3

4.5

nC

P-Ch

3.8

6

Gate-Source Charge

Qgs

N-Ch

0.6

P-Ch

0.6

Gate-Drain Charge

Qgd

N-Ch

1.0

P-Ch

1.5

Turn-On Delay Time

td(on)

N-Channel

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

P-Channel

VDD = - 15 V, RL = 15 Ω

ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω

N-Ch

5

8

ns

P-Ch

5

8

Rise Time

tr

N-Ch

12

23

P-Ch

15

23

Turn-Off Delay Time

td(off)

N-Ch

13

23

P-Ch

20

30

Fall Time

tf

N-Ch

7

12

P-Ch

20

30

Source-Drain Reverse Recovery Time

trr

IF = 1.05 A, di/dt = 100 A/µs

N-Ch

15

25

IF = - 1.05 A, di/dt = 100 A/µs

P-Ch

18

30

类似零件编号 - SI3590DV-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI3590DV-T1-E3	232Kb / 13P	N- and P-Channel 30-V (D-S) MOSFET Rev. C, 28-Sep-09
Vishay Siliconix	SI3590DV-T1-E3	282Kb / 13P	N- and P-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI3590DV-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4532DY	123Kb / 7P	N- and P-Channel 30-V (D-S) MOSFET Rev. D, 23-Nov-93
	SI3590DV	232Kb / 13P	N- and P-Channel 30-V (D-S) MOSFET Rev. C, 28-Sep-09
	SI6544BDQ	66Kb / 8P	N-and P-Channel 30-V (D-S) MOSFET Rev. A, 16-Jun-03
	SI5511DC	164Kb / 12P	N- and P-Channel 30-V (D-S) MOSFET Rev. B, 22-Oct-07
	SI5504BDC	152Kb / 12P	N- and P-Channel 30 V (D-S) MOSFET Rev. B, 08-Mar-10
Guangdong Kexin Industr...	KI4544DY	56Kb / 2P	N- and P-Channel 30-V (D-S) MOSFET
VBsemi Electronics Co.,...	AO4606A	1Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET
VBsemi Electronics Co.,...	FDS8960C-NL	1Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET
Vishay Telefunken	SI3590DV	233Kb / 13P	N- and P-Channel 30-V (D-S) MOSFET
Vishay Telefunken	SI4532CDY	296Kb / 15P	N- and P-Channel 30 V (D-S) MOSFET
VBsemi Electronics Co.,...	SH8M4TB	1Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET