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SI3475DV-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI3475DV-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74249 S-62239–Rev. A, 06-Nov-06 Vishay Siliconix Si3475DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 10 1 0.01 VSD - Source-to-Drain Voltage (V) 0 0.3 0.6 0.9 1.2 1.5 0.10 TJ = 150 °C TJ = 25 °C - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 5 µA TJ – Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 1.2 2.4 3.6 4.8 6.0 02468 10 VGS – Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0 36 60 12 24 Time (sec) 48 10 0.01 0.001 0.1 1 Safe Operating Area *VGS minimum VGS at which rDS(on) is specified 10 0.001 1 0.01 VDS – Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 1000 *Limited by rDS(on) T = 25 °C Single Pulse 1 s 10 s dc 10 ms 100 ms 1 ms A |
类似零件编号 - SI3475DV-T1-E3 |
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类似说明 - SI3475DV-T1-E3 |
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