SI3475DV datasheet(3/7 Pages) VISHAY

部件名	SI3475DV

功能描述	P-Channel 200-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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3 / 7 page

Document Number: 74249

S-62239–Rev. A, 06-Nov-06

www.vishay.com

3

Vishay Siliconix

Si3475DV

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

1

2

3

4

5

02468

10

VDS – Drain-to-Source Voltage (V)

V

= 10 thru

4 V

GS

1.00

1.20

1.40

1.60

1.80

2.00

012345

VGS = 10 V

ID – Drain Current (A)

VGS = 6 V

0

2

4

6

8

10

0.0

2.5

5.0

7.5

10.0

12.5

ID = 1 A

Qg – Total Gate Charge (nC)

VDS = 125 V

VDS = 75 V

VDS = 100 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.3

0.6

0.9

1.2

1.5

024

6

8

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS – Gate-to-Source Voltage (V)

Crss

0

150

300

450

600

750

0

4

8

12

16

20

Coss

Ciss

VDS – Drain-to-Source Voltage (V)

0.4

0.8

1.2

1.6

2.0

2.4

- 50

- 25

0

25

50

75

100

125

150

TJ – Junction Temperature (°C)

VGS = 6 V

VGS = 10 V

ID = 1 A

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