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SI2309DS 数据表(PDF) 4 Page - Vishay Siliconix |
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SI2309DS 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 5 page www.vishay.com 4 Document Number: 70835 S-72216-Rev. C, 22-Oct-07 Vishay Siliconix Si2309DS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70835. Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power 0.01 0 1 6 12 2 4 10 500 0.1 Time (s) 8 10 100 TA = 25 °C Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 Limited by rDS(on)* TA = 25 °C Single Pulse 10 µs 100 µs 1 ms 10 ms 100 ms DC, 100 s, 10 s, 1 s VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-3 10-2 1 10 500 10-1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
类似零件编号 - SI2309DS |
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类似说明 - SI2309DS |
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