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SI2305ADS-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI2305ADS-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 69940 S-82713-Rev. C, 10-Nov-08 www.vishay.com 3 Vishay Siliconix Si2305ADS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 3 6 9 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS = 4.5 thru 2 V VGS =1.5 V VGS =1 V VGS =0.5 V 0.02 0.04 0.06 0.08 0.10 0 246 8 10 ID - Drain Current (A) VGS =2.5 V VGS =4.5 V VGS =1.8V 0.0 0.9 1.8 2.7 3.6 4.5 0.0 1.5 3.0 4.5 6.0 7.5 9.0 ID =4.1 A Qg - Total Gate Charge (nC) VDS =4 V VDS =6.4 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 3 6 9 12 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC =25 °C TC = - 55 °C Crss 0 300 600 900 1200 024 6 8 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VDS =4.5 V,ID =4.1 A VDS =2.5 V,ID =3.4 A |
类似零件编号 - SI2305ADS-T1-GE3 |
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类似说明 - SI2305ADS-T1-GE3 |
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