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SI1972DH 数据表(PDF) 5 Page - Vishay Siliconix |
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SI1972DH 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Document Number: 74398 S-62442-Rev. A, 27-Nov-06 www.vishay.com 5 Vishay Siliconix Si1972DH TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 75 100 125 150 TC - Case Temperature (°C) Package Limited Power Derating C - Case Temperature (°C) T 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 170 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
类似零件编号 - SI1972DH |
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类似说明 - SI1972DH |
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