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SI1970DH-T1-E3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI1970DH-T1-E3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74343 S-62441-Rev. A, 27-Nov-06 Vishay Siliconix Si1970DH Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 25 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 3.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V 4A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 1.2 A 0.185 0.225 Ω VGS = 2.5 V, ID = 0.29 A 0.285 0.345 Forward Transconductancea gfs VDS = 15 V, ID = 1.2 A 2.5 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 95 pF Output Capacitance Coss 17 Reverse Transfer Capacitance Crss 9 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 1.4 A 2.5 3.8 nC VDS = 10 V, VGS = 4.5 V, ID = 1.4 A 1.15 1.7 Gate-Source Charge Qgs 0.4 Gate-Drain Charge Qgd 0.3 Gate Resistance Rg f = 1 MHz 4 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω 915 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 15 25 Fall Time tf 15 25 Turn-on Delay Time td(on) VDD = 15 V, RL = 13.6 Ω ID ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω 510 Rise Time tr 10 15 Turn-Off Delay Time td(off) 10 15 Fall Time tr 612 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1 A Pulse Diode Forward Current ISM 4 Body Diode Voltage VSD IS = 1.1 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr IF = 1.1 A, di/dt = 100 A/µs, TJ = 25 °C 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 16.5 ns Reverse Recovery Rise Time tb 3.5 |
类似零件编号 - SI1970DH-T1-E3 |
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类似说明 - SI1970DH-T1-E3 |
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