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SI1488DH-T1-E3 数据表(PDF) 1 Page - Vishay Siliconix |
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SI1488DH-T1-E3 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si1488DH New Product Document Number: 73788 S-61085–Rev. C, 19-Jun-06 www.vishay.com 1 N-Channel 20-V (D-S) MOSFET FEATURES •TrenchFET® Power MOSFET • 100 % Rg & UIS Tested APPLICATIONS • Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) Qg (Typ) 20 0.049 at VGS = 4.5 V 6.1a 6.0 0.056 at VGS = 2.5 V 5.7 0.065 at VGS = 1.8 V 5.3 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TC = 25 °C ID 6.1 A TC = 70 °C 4.9 TA = 25 °C 4.6b, c TA = 70 °C 3.7b, c Pulsed Drain Current IDM 20 Avalanche Current L = 0.1 mH IAS 10 Repetitive Avalanche Energy EAS 5mJ Continuous Source-Drain Diode Current TC = 25 °C IS 2.3 A TA = 25 °C 1.3b, c Maximum Power Dissipationa TC = 25 °C PD 2.8 W TC = 70 °C 1.8 TA = 25 °C 1.5b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 sec RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free) Marking Code AG XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S N-Channel MOSFET G D S RoHS COMPLIANT |
类似零件编号 - SI1488DH-T1-E3 |
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类似说明 - SI1488DH-T1-E3 |
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