SI1069X-T1-GE3 datasheet(4/6 Pages) VISHAY

部件名	SI1069X-T1-GE3

功能描述	P-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 70442

S-80641-Rev. B, 24-Mar-08

Vishay Siliconix

Si1069X

New Product

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

0.01

0.1

1

TJ = 25 °C

10

TJ - Temperature (°C)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

VGS - Gate-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

012345

ID = 0.94 A

TA = 125 °C

TA = 25 °C

Time (s)

0.01

0.1

1

10

100

1000

0

1

2

3

4

5

Safe Operating Area, Junction-to-Ambient

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

DC

1 s

10 s

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

Limited by RDS(on)*

BVDSS Limited

0.001

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类似说明 - SI1069X-T1-GE3

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